Infineon · Thyristors & Power Discretes · MPN IHW50N65R6XKSA1
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| Td(off) | 261ns |
|---|---|
| Pd - Power Dissipation | 251W |
| Td(on) | 21ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 18pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.5mA |
| Vce Saturation(VCE(sat)) | 1.6V@50A,15V |
| Reverse Recovery Time(trr) | 108ns |
| Switching Energy(Eoff) | 660uJ |
251W 100A 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS