Infineon · Thyristors & Power Discretes · MPN IHW50N65R5XKSA1
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| Td(off) | 220ns |
|---|---|
| Pd - Power Dissipation | 282W |
| Td(on) | 26ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 23pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.7V@15V,50A |
| Vce Saturation(VCE(sat)) | 1.7V@50A,15V |
| Reverse Recovery Time(trr) | 95ns |
| Switching Energy(Eoff) | 180uJ |
282W 80A 650V TO-247-3 Single IGBTs RoHS