Infineon · Thyristors & Power Discretes · MPN IHW40N65R6
No reviews yet — be the first to review Infineon IHW40N65R6.
| Pd - Power Dissipation | 210W |
|---|---|
| Td(off) | 211ns |
| Td(on) | 17ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 83A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 16pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.4mA |
| Vce Saturation(VCE(sat)) | 1.6V@40A,15V |
| Reverse Recovery Time(trr) | 99ns |
| Switching Energy(Eoff) | 420uJ |
| Turn-On Energy (Eon) | 1.1mJ |
210W 83A 650V TO-247-3 Single IGBTs RoHS