Infineon IHW40N120R5

Infineon · Thyristors & Power Discretes · MPN IHW40N120R5

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Specifications

Td(off)420ns
Pd - Power Dissipation394W
Operating Temperature-40℃~+175℃
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)60pF
Input Capacitance(Cies)2.37nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.1V@1mA
Gate Charge(Qg)310nC@15V
Output Capacitance(Coes)70pF
Vce Saturation(VCE(sat))1.85V@40A,15V
Switching Energy(Eoff)1.6mJ

Technical details

IGBT 1.2kV 80A 394W Through Hole TO-247-3

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