Infineon IHW30N90T

Infineon · Thyristors & Power Discretes · MPN IHW30N90T

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Specifications

Td(off)556ns
Pd - Power Dissipation428W
Td(on)45ns
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)900V
Input Capacitance(Cies)-
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)280nC
Switching Energy(Eoff)1.8mJ
Turn-On Energy (Eon)-

Technical details

428W 60A 900V FS (Field Stop) TO-247-3-1 Single IGBTs RoHS

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