Infineon · Thyristors & Power Discretes · MPN IHW30N160R5
No reviews yet — be the first to review Infineon IHW30N160R5.
| Pd - Power Dissipation | 263W |
|---|---|
| Td(off) | 290ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.6kV |
| Reverse Transfer Capacitance (Cres) | 38pF |
| Input Capacitance(Cies) | 1.5nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@0.75mA |
| Output Capacitance(Coes) | 42pF |
| Gate Charge(Qg) | 205nC@15V |
| Vce Saturation(VCE(sat)) | 2.15V@30A,15V |
| Switching Energy(Eoff) | 2mJ |
263W 60A 1.6kV TO-247-3 Single IGBTs RoHS