Infineon IHW30N140R5LXKSA1

Infineon · Thyristors & Power Discretes · MPN IHW30N140R5LXKSA1

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Specifications

Td(off)175ns
Pd - Power Dissipation306W
Operating Temperature-40℃~+175℃
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)1.4kV
Reverse Transfer Capacitance (Cres)37pF
Input Capacitance(Cies)1.52nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@0.47mA
Output Capacitance(Coes)45pF
Gate Charge(Qg)210nC@15V
Vce Saturation(VCE(sat))1.95V@30A,15V
Switching Energy(Eoff)140uJ

Technical details

IGBT 1.4kV 80A 306W Through Hole TO-247-3

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