Infineon · Thyristors & Power Discretes · MPN IHW30N135R5
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| Td(off) | 310ns |
|---|---|
| Pd - Power Dissipation | 330W |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| Reverse Transfer Capacitance (Cres) | 40pF |
| Input Capacitance(Cies) | 1.81nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@0.75mA |
| Gate Charge(Qg) | 235nC@15V |
| Output Capacitance(Coes) | 50pF |
| Vce Saturation(VCE(sat)) | 1.95V@30A,15V |
| Switching Energy(Eoff) | 1.4mJ |
330W 30A 1.35kV TO-247-3 Single IGBTs RoHS