Infineon · Thyristors & Power Discretes · MPN IHW30N120R5XKSA1
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| Pd - Power Dissipation | 330W |
|---|---|
| Td(off) | 330ns |
| Operating Temperature | -40℃~+175℃ |
| Td(on) | - |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 1.8nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@0.75mA |
| Vce Saturation(VCE(sat)) | 1.85V@30A,15V |
| Gate Charge(Qg) | 235nC@15V |
| Switching Energy(Eoff) | 1.1mJ |
IGBT FS (Field Stop) 1.2kV 60A 330W Through Hole TO-247-3