Infineon · Thyristors & Power Discretes · MPN IHW30N110R3
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| Pd - Power Dissipation | 333W |
|---|---|
| Td(off) | 350ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.1kV |
| Reverse Transfer Capacitance (Cres) | 45pF |
| Input Capacitance(Cies) | 1.46nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@0.7mA |
| Output Capacitance(Coes) | 55pF |
| Gate Charge(Qg) | 180nC@15V |
| Vce Saturation(VCE(sat)) | 1.75V@30A,15V |
| Switching Energy(Eoff) | 1.15mJ |
IGBT 1.1kV 60A 333W Through Hole TO-247-3