Infineon · Thyristors & Power Discretes · MPN IHW25N120E1
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| Pd - Power Dissipation | 231W |
|---|---|
| Td(off) | 249ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 31pF |
| Input Capacitance(Cies) | 1.3nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@0.8mA |
| Vce Saturation(VCE(sat)) | 2V@25A,15V |
| Output Capacitance(Coes) | 37pF |
| Gate Charge(Qg) | 147nC@15V |
| Switching Energy(Eoff) | 80uJ |
231W 25A 1.2kV TO-247-3 Single IGBTs RoHS