Infineon · Thyristors & Power Discretes · MPN IHW20N65R5
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| Pd - Power Dissipation | 150W |
|---|---|
| Td(off) | 250ns |
| Td(on) | 23ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 10pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.2mA |
| Vce Saturation(VCE(sat)) | 1.7V@20A,15V |
| Reverse Recovery Time(trr) | 82ns |
| Switching Energy(Eoff) | 160uJ |
| Turn-On Energy (Eon) | 540uJ |
150W 20A 650V TO-247-3 Single IGBTs RoHS