Infineon IHW20N135R5XKSA

Infineon · Thyristors & Power Discretes · MPN IHW20N135R5XKSA

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Specifications

Td(off)235ns
Pd - Power Dissipation288W
Operating Temperature-
Current - Collector(Ic)40A
Collector-Emitter Breakdown Voltage (Vces)1.35kV
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)170nC
Switching Energy(Eoff)950uJ

Technical details

288W 40A 1.35kV TO-247-3 Single IGBTs RoHS

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