Infineon · Thyristors & Power Discretes · MPN IHW20N135R3
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| Pd - Power Dissipation | 310W |
|---|---|
| Td(off) | 335ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | - |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.8V@15V,20A |
| Gate Charge(Qg) | 195nC |
| Switching Energy(Eoff) | 1.3mJ |
| Turn-On Energy (Eon) | - |
310W 40A 1.35kV TO-247-3 Single IGBTs RoHS