Infineon IHW15N120R3

Infineon · Thyristors & Power Discretes · MPN IHW15N120R3

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Specifications

Td(off)300ns
Pd - Power Dissipation254W
Operating Temperature-40℃~+175℃
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)32pF
Input Capacitance(Cies)1.165nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.1V@0.4mA
Vce Saturation(VCE(sat))1.7V@15A,15V
Output Capacitance(Coes)40pF
Gate Charge(Qg)165nC@15V
Switching Energy(Eoff)700uJ

Technical details

254W 30A 1.2kV TO-247-3 Single IGBTs RoHS

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