Infineon IHW15N120E1

Infineon · Thyristors & Power Discretes · MPN IHW15N120E1

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Specifications

Pd - Power Dissipation156W
Td(off)150ns
Operating Temperature-40℃~+150℃
Current - Collector(Ic)15A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)20pF
Input Capacitance(Cies)810pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@0.5mA
Output Capacitance(Coes)24pF
Vce Saturation(VCE(sat))2V@15A,15V
Gate Charge(Qg)90nC@15V
Switching Energy(Eoff)30uJ

Technical details

IGBT 1.2kV 15A 156W Through Hole TO-247-3

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