Infineon · Thyristors & Power Discretes · MPN IHFW40N65R5S
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| Pd - Power Dissipation | 108W |
|---|---|
| Td(off) | 363ns |
| Td(on) | 44ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 61A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 3.428nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.4mA |
| Vce Saturation(VCE(sat)) | 2V@40A,15V |
| Gate Charge(Qg) | 142nC@15V |
| Reverse Recovery Time(trr) | 103ns |
| Switching Energy(Eoff) | 700uJ |
IGBT 650V 61A 108W Through Hole TO-247-3