Infineon · Thyristors & Power Discretes · MPN IGZ100N65H5XKSA1
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| Td(off) | 421ns |
|---|---|
| Pd - Power Dissipation | 536W |
| Td(on) | 30ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 161A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 6.56nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@1mA |
| Gate Charge(Qg) | 210nC@100A,15V |
| Vce Saturation(VCE(sat)) | 2.1V@100A,15V |
| Switching Energy(Eoff) | 770uJ |
| Turn-On Energy (Eon) | 850uJ |
IGBT 650V 161A 536W Through Hole TO-247-4