Infineon · Thyristors & Power Discretes · MPN IGW75N65H5XKSA1
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| Td(off) | 174ns |
|---|---|
| Pd - Power Dissipation | 395W |
| Td(on) | 28ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 120A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 17pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.75mA |
| Vce Saturation(VCE(sat)) | 2.1V@75A,15V |
| Switching Energy(Eoff) | 950uJ |
| Turn-On Energy (Eon) | 2.25mJ |
IGBT 650V 120A 395W Through Hole TO-247-3