Infineon · Thyristors & Power Discretes · MPN IGW75N60H3FKSA1
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| Pd - Power Dissipation | 428W |
|---|---|
| Td(off) | 265ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 31ns |
| Current - Collector(Ic) | 140A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 138pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,75A |
| Vce Saturation(VCE(sat)) | 1.85V@75A,15V |
| Switching Energy(Eoff) | 1.7mJ |
| Turn-On Energy (Eon) | 3mJ |
IGBT FS (Field Stop) 600V 140A 428W Through Hole TO-247-3