Infineon · Thyristors & Power Discretes · MPN IGW60N60H3
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| Pd - Power Dissipation | 416W |
|---|---|
| Td(off) | 252ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 27ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@1mA |
| Vce Saturation(VCE(sat)) | 1.85V@60A,15V |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 1.13mJ |
| Turn-On Energy (Eon) | 2.1mJ |
416W 80A 600V FS (Field Stop) TO-247-3 Single IGBTs RoHS