Infineon · Thyristors & Power Discretes · MPN IGW50N65H5AXKSA1
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| Td(off) | 173ns |
|---|---|
| Pd - Power Dissipation | 270W |
| Td(on) | 21ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 116nC |
| Switching Energy(Eoff) | 160uJ |
| Turn-On Energy (Eon) | 450uJ |
270W 80A 650V TO-247-3 Single IGBTs RoHS