Infineon · Thyristors & Power Discretes · MPN IGW50N65H5
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| Pd - Power Dissipation | 305W |
|---|---|
| Td(off) | 180ns |
| Td(on) | 21ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.5mA |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V |
| Switching Energy(Eoff) | 180uJ |
| Turn-On Energy (Eon) | 520uJ |
| Input Capacitance(Cies) | 3nF |
305W 80A 650V TO-247-3 Single IGBTs RoHS