Infineon · Thyristors & Power Discretes · MPN IGW50N65F5
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| Td(off) | 175ns |
|---|---|
| Pd - Power Dissipation | 305W |
| Td(on) | 21ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 3nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.5mA |
| Gate Charge(Qg) | 120nC@15V |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V |
| Switching Energy(Eoff) | 160uJ |
| Turn-On Energy (Eon) | 490uJ |
IGBT 650V 80A 305W Through Hole TO-247-3