Infineon · Thyristors & Power Discretes · MPN IGW50N60H3
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| Pd - Power Dissipation | 333W |
|---|---|
| Td(off) | 235ns |
| Td(on) | 23ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 96pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.8mA |
| Vce Saturation(VCE(sat)) | 2.3V@50A,15V |
| Switching Energy(Eoff) | 910uJ |
| Turn-On Energy (Eon) | 1.45mJ |
333W 50A 600V FS (Field Stop) TO-247-3 Single IGBTs RoHS