Infineon IGW40T120FKSA1

Infineon · Thyristors & Power Discretes · MPN IGW40T120FKSA1

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Specifications

Td(off)480ns
Pd - Power Dissipation270W
Td(on)48ns
Operating Temperature-40℃~+150℃@(Tj)
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)110pF
IGBT TypeNPT (Non-Punch Through);FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1.5mA
Vce Saturation(VCE(sat))2.3V@40A,15V
Switching Energy(Eoff)6.5mJ
Turn-On Energy (Eon)6.5mJ

Technical details

IGBT 1.2kV 75A 270W Through Hole TO-247-3-1

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