Infineon · Thyristors & Power Discretes · MPN IGW40N60TP
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| Td(off) | 222ns |
|---|---|
| Pd - Power Dissipation | 246W |
| Td(on) | 18ns |
| Current - Collector(Ic) | 48A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 48pF |
| Input Capacitance(Cies) | 1.4nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.64mA |
| Output Capacitance(Coes) | 60pF |
| Vce Saturation(VCE(sat)) | 1.8V |
| Gate Charge(Qg) | 177nC@15V |
| Switching Energy(Eoff) | 610uJ |
246W 48A 600V TO-247-3 Single IGBTs RoHS