Infineon · Thyristors & Power Discretes · MPN IGW40N60H3FKSA1
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| Td(off) | 197ns |
|---|---|
| Pd - Power Dissipation | 306W |
| Td(on) | 19ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 65pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.58mA |
| Vce Saturation(VCE(sat)) | 2.4V@40A,15V |
| Switching Energy(Eoff) | 580uJ |
| Turn-On Energy (Eon) | 1.1mJ |
| Input Capacitance(Cies) | 2.194nF |
306W 80A 600V FS (Field Stop) TO-247-3-1 Single IGBTs RoHS