Infineon · Thyristors & Power Discretes · MPN IGW40N120H3
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| Td(off) | 290ns |
|---|---|
| Pd - Power Dissipation | 483W |
| Td(on) | 30ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 130pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Vce Saturation(VCE(sat)) | 2.05V@40A,15V |
| Switching Energy(Eoff) | 1.23mJ |
| Turn-On Energy (Eon) | 1.93mJ |
483W 80A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS