Infineon · Thyristors & Power Discretes · MPN IGW30N65L5
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| Td(off) | 308ns |
|---|---|
| Pd - Power Dissipation | 227W |
| Td(on) | 33ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 85A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 18pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.2V@0.4mA |
| Vce Saturation(VCE(sat)) | 1.35V@30A,15V |
| Switching Energy(Eoff) | 1.35mJ |
| Turn-On Energy (Eon) | 470uJ |
| Input Capacitance(Cies) | 4.9nF |
227W 85A 650V TO-247-3 Single IGBTs RoHS