Infineon · Thyristors & Power Discretes · MPN IGW30N60TP
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| Td(off) | 179ns |
|---|---|
| Pd - Power Dissipation | 200W |
| Operating Temperature | -40℃~+175℃ |
| Td(on) | 15ns |
| Current - Collector(Ic) | 53A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 1.05nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.48mA |
| Vce Saturation(VCE(sat)) | 1.8V@30A,15V |
| Switching Energy(Eoff) | 420uJ |
| Turn-On Energy (Eon) | 710uJ |
IGBT 600V 53A 200W Through Hole TO-247-3