Infineon · Thyristors & Power Discretes · MPN IGW30N60H3FKSA1
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| Pd - Power Dissipation | 187W |
|---|---|
| Td(off) | 207ns |
| Td(on) | 21ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 50pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@0.43mA |
| Vce Saturation(VCE(sat)) | 2.4V@30A,15V |
| Switching Energy(Eoff) | 440uJ |
| Turn-On Energy (Eon) | 940uJ |
IGBT FS (Field Stop) 600V 60A 187W Through Hole TO-247-3