Infineon · Thyristors & Power Discretes · MPN IGW25N120H3FKSA1
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| Td(off) | 277ns |
|---|---|
| Pd - Power Dissipation | 326W |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 27ns |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 75pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.4V@15V,25A |
| Vce Saturation(VCE(sat)) | 2.4V@25A,15V |
| Switching Energy(Eoff) | 2.65mJ |
| Turn-On Energy (Eon) | 2.65mJ |
326W 50A 1.2kV FS (Field Stop) TO-247-3-1 Single IGBTs RoHS