Infineon · Thyristors & Power Discretes · MPN IGW15N120H3
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| Td(off) | 260ns |
|---|---|
| Pd - Power Dissipation | 217W |
| Td(on) | 21ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 15A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 45pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@0.5mA |
| Vce Saturation(VCE(sat)) | 2.05V@15A,15V |
| Switching Energy(Eoff) | 450uJ |
| Turn-On Energy (Eon) | 1.1mJ |
| Input Capacitance(Cies) | 875pF |
217W 15A 1.2kV TO-247-3 Single IGBTs RoHS