Infineon · Thyristors & Power Discretes · MPN IGW100N60H3
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| Td(off) | 265ns |
|---|---|
| Pd - Power Dissipation | 714W |
| Td(on) | 30ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 140A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 180pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@1.6mA |
| Vce Saturation(VCE(sat)) | 2.3V@100A,15V |
| Switching Energy(Eoff) | 1.9mJ |
| Turn-On Energy (Eon) | 3.7mJ |
714W 140A 600V FS (Field Stop) TO-247-3 Single IGBTs RoHS