Infineon · Thyristors & Power Discretes · MPN IGW08T120
No reviews yet — be the first to review Infineon IGW08T120.
| Pd - Power Dissipation | 70W |
|---|---|
| Td(off) | 70ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 40ns |
| Current - Collector(Ic) | 16A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 28pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@0.3mA |
| Gate Charge(Qg) | 53nC@15V |
| Output Capacitance(Coes) | 36pF |
| Vce Saturation(VCE(sat)) | 2.2V@8A,15V |
| Switching Energy(Eoff) | 700uJ |
70W 16A 1.2kV TO-247-3 Single IGBTs RoHS