Infineon · Thyristors & Power Discretes · MPN IGU04N60T
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| Td(off) | 164ns |
|---|---|
| Pd - Power Dissipation | 42W |
| Td(on) | 14ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 9.5A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 7.5pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@60uA |
| Vce Saturation(VCE(sat)) | 2.05V@4A,15V |
| Switching Energy(Eoff) | 84uJ |
| Turn-On Energy (Eon) | 61uJ |
| Input Capacitance(Cies) | 252pF |
42W 9.5A 600V TO-251-3 Single IGBTs RoHS