Infineon · Thyristors & Power Discretes · MPN IGQ120N120S7XKSA1
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| Td(off) | 215ns |
|---|---|
| Pd - Power Dissipation | 1.004kW |
| Td(on) | 44ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 216A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 80pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@2.34mA |
| Vce Saturation(VCE(sat)) | 2V@120A,15V |
| Switching Energy(Eoff) | 5.72mJ |
| Turn-On Energy (Eon) | 10.3mJ |
| Input Capacitance(Cies) | 17.3nF |
IGBT 1.2kV 216A 1004W Through Hole TO-247-3