Infineon · Thyristors & Power Discretes · MPN IGP50N60T
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| Td(off) | 299ns |
|---|---|
| Pd - Power Dissipation | 333W |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 26ns |
| Current - Collector(Ic) | 90A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 310nC |
| Switching Energy(Eoff) | 1.4mJ |
| Turn-On Energy (Eon) | 1.2mJ |
333W 90A 600V FS (Field Stop) TO-220-3 Single IGBTs RoHS