Infineon · Thyristors & Power Discretes · MPN IGP30N65F5
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| Pd - Power Dissipation | 188W |
|---|---|
| Td(off) | 170ns |
| Td(on) | 19ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 35A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 9pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.3mA |
| Vce Saturation(VCE(sat)) | 2.1V@30A,15V |
| Switching Energy(Eoff) | 70uJ |
| Turn-On Energy (Eon) | 280uJ |
| Input Capacitance(Cies) | 1.8nF |
188W 35A 650V TO-220-3 Single IGBTs RoHS