Infineon · Thyristors & Power Discretes · MPN IGP10N60T
No reviews yet — be the first to review Infineon IGP10N60T.
| Pd - Power Dissipation | 110W |
|---|---|
| Td(off) | 215ns |
| Td(on) | 12ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 24A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 17pF |
| Input Capacitance(Cies) | 551pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.3mA |
| Vce Saturation(VCE(sat)) | 2.05V@10A,15V |
| Output Capacitance(Coes) | 40pF |
| Switching Energy(Eoff) | 270uJ |
110W 24A 600V TO-220-3 Single IGBTs RoHS