Infineon IGP06N60T

Infineon · Thyristors & Power Discretes · MPN IGP06N60T

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Specifications

Pd - Power Dissipation88W
Td(off)130ns
Td(on)9ns
Current - Collector(Ic)6A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)11pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.1V@0.18mA
Vce Saturation(VCE(sat))2.05V@6A,15V
Switching Energy(Eoff)110uJ
Turn-On Energy (Eon)90uJ
Input Capacitance(Cies)368pF

Technical details

88W 6A 600V FS (Field Stop) TO-220-3 Single IGBTs RoHS

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