Infineon · Thyristors & Power Discretes · MPN IGD10N65T6ARMA1
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| Td(off) | 106ns |
|---|---|
| Pd - Power Dissipation | 75W |
| Td(on) | 30ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 23A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.9V@15V,8.5A |
| Gate Charge(Qg) | 27nC |
| Switching Energy(Eoff) | 70uJ |
| Turn-On Energy (Eon) | 200uJ |
75W 23A 650V FS (Field Stop) TO-252-3 Single IGBTs RoHS