Infineon · Thyristors & Power Discretes · MPN IGD06N60TATMA1
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| Td(off) | 130ns |
|---|---|
| Pd - Power Dissipation | 88W |
| Td(on) | 9ns |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Current - Collector(Ic) | 12A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 11pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.18mA |
| Vce Saturation(VCE(sat)) | 2.05V@6A,15V |
| Switching Energy(Eoff) | 110uJ |
| Turn-On Energy (Eon) | 200uJ |
IGBT FS (Field Stop) 600V 12A Surface Mount TO-252