Infineon · Thyristors & Power Discretes · MPN IGD03N120S7ATMA1
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| Pd - Power Dissipation | 45W |
|---|---|
| Td(off) | 89ns |
| Td(on) | 19ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 10A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 2pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@0.06mA |
| Vce Saturation(VCE(sat)) | 2V@3A,15V |
| Switching Energy(Eoff) | 160uJ |
| Turn-On Energy (Eon) | 210uJ |
| Input Capacitance(Cies) | 500pF |
45W 10A 1.2kV TO-252-3 Single IGBTs RoHS