Infineon · Thyristors & Power Discretes · MPN IGB50N65S5
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| Td(off) | 139ns |
|---|---|
| Pd - Power Dissipation | 270W |
| Td(on) | 21ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.8V@0.5mA |
| Vce Saturation(VCE(sat)) | 1.7V@50A,15V |
| Switching Energy(Eoff) | 740uJ |
| Turn-On Energy (Eon) | 1.23mJ |
| Input Capacitance(Cies) | 3nF |
270W 80A 650V TO-263-3 Single IGBTs RoHS