Infineon · Thyristors & Power Discretes · MPN IGB10N60TATMA1
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| Pd - Power Dissipation | 110W |
|---|---|
| Td(on) | 12ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 24A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 17pF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.3mA |
| Vce Saturation(VCE(sat)) | 2.05V@10A,15V |
| Switching Energy(Eoff) | 270uJ |
| Turn-On Energy (Eon) | 160uJ |
| Input Capacitance(Cies) | 551pF |
110W 24A 600V NPT (Non-Punch Through) TO-263-3 Single IGBTs RoHS