Infineon · Thyristors & Power Discretes · MPN IGB08N120S7ATMA1
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| Pd - Power Dissipation | 87W |
|---|---|
| Td(off) | 149ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 14ns |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 1.3nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@0.16mA |
| Vce Saturation(VCE(sat)) | 2V@8A,15V |
| Gate Charge(Qg) | 55nC@8A,15V |
| Switching Energy(Eoff) | 410uJ |
| Turn-On Energy (Eon) | 460uJ |
IGBT 1.2kV 20A 87W Surface Mount TO-263-3