Infineon · Thyristors & Power Discretes · MPN IFS150B12N3T4_B31
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| Pd - Power Dissipation | 750W |
|---|---|
| Operating Temperature | -40℃~+150℃@(Tj) |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 9.35nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
750W 150A 1.2kV FS (Field Stop) Single IGBTs RoHS