Infineon · Thyristors & Power Discretes · MPN IFF600B12ME4S8PB11
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| Pd - Power Dissipation | 20mW |
|---|---|
| Current - Collector(Ic) | 600A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,600A |
| Operating Temperature | -40℃~+150℃ |
20mW 600A 1.2kV FS (Field Stop) IGBT Modules RoHS